Author, Subjects, Keywords

Cited Author

 

 
   » By Author or Editor
 » Browse Author by Alphabet
 » By Journal
 » By Subjects
 » Malaysian Journals
 » By Type
 » By Year
 » By Latest Additions
 
 
   » By Author
 » Top 20 Authors
 » Top 20 Article
 » Top Journal Cited
 » Top Article Cited
 » Journal Citation Statistics
 » Usage Since Sept 2007


 
 
 

Login | Create Account

Effect of alignment mark architecture on alignment signal behavior in advanced lithography

Normah Ahmad, and Uda Hashim, and Mohd Jeffery Manaf, and Kader Ibrahim Abdul Wahab, (2007) Effect of alignment mark architecture on alignment signal behavior in advanced lithography. International Journal of Mechanical and Materials Engineering, 2 (1). pp. 8-18. ISSN 1823-0334

[img]
Preview
PDF (Full Text) - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
187Kb

Official URL: http://ejum.fsktm.um.edu.my/ArticleInformation.aspx?ArticleID=689

Affiliations

Kolej Universiti Kejuruteraan Utara Malaysia, School of Microelectronic Engineering
Kolej Universiti Kejuruteraan Utara Malaysia, School of Microelectronic Engineering
SilTerra Malaysia Sdn. Bhd.
SilTerra Malaysia Sdn. Bhd.

Abstract

Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is defined through metal masking steps is known as metal mark. Due to the difference between processing steps for these two layers, alignment mark characteristics exhibits a different nature. Metal mark deformation is not as severe as contact mark since metal mark formation only involved two processing steps, which is etching, and deposition steps. Hence, it is expected that the alignment signal behavior for this two mark type will be different. AH32, AH53, and AH74 metal and contact alignment mark was evaluated. Based from the results, AH32 mark shows a significant trend difference between contact and metal mark. This is due to the fact AH32 contact mark is the easiest to be deformed since its feature size is the biggest compared to AH53 and AH74. AH53 and AH74 alignment signal performance between contact and metal mark are comparable.

Item Type:Journal
Keywords:Alignment signal, lithography, Alignment mark
Subjects:T Technology, Engineering
ID Code:10465

1. Harry J. Levinson, “Principles of Lithography”, SPIE Press, pg 201 – 223, 2001

2. ASML, “ATHENA Knowledge Sharing”, Application Note, pg 24 – 28, 1999

3. Yuanting Cui, Albert So, Sean Louks, “Fine Tune W-CMP Process with Alignment Mark Selection for Optimal Metal Layer and Yield Benefits” Proceeding of SPIE, Vol. 5375, 2004.

4. ASML, “Process Effects on Alignment: Tungsten CMP/Aluminum PVD”, Application Note, pg 5 – 17, 2004.

5. “Diffraction; Thin Film Interference” from http://physics.bu.edu, 1999.

6. “Trench Filling by Physical Vapor Deposition”, from www.ipm.virginia.edu, pg 138 – 173, 2000.

7. James R. Sheats, Bruce W. Smith, “Microlithography, Science and Technology”, Marcel Dekker Inc, pg 317–367,1998

8. S. Wolf, R.N. Tauber, ‘Silicon Processing for the VLSI Era Volume 1- Process Technology”, Lattice Press pg 582-588, 2nd Edition, 2000

9. Pantazis Mairoulis, John McDonald, “Geometrical Optics and Optical Design”, Oxford University Press, pg175–180,1996

10. Rouchouze, Eric, Darracq, Jean Michael, Gemen, Jack, “ CMP-Compatible Alignment Strategy”, Proc. Of SPIE, Vol 3050, pg 282 –292, 1997

11. Thomas V. Pistor, Robert J. Socha, “Rigorous Electromagnetic Simulation of Stepper Alignment”, Proc of SPIE, Vol. 4689, pg 1045 –1056, 2002

Repository Staff Only: item control page