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Electrophoretic Deposition and Characterization of Copper Selenide Thin films

Mohd. Fairul Sharin Abdul Razak, and Zulkarnain Zainal, (2007) Electrophoretic Deposition and Characterization of Copper Selenide Thin films. Malaysian Journal of Analytical Sciences, 11 (1). pp. 324-330. ISSN 13942506

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Official URL: http://pkukmweb.ukm.my/~mjas/v11_n1/47-346A3-KB-Za-format-x.pdf

Affiliations

Universiti Putra Malaysia, Faculty of Science, Dept. of Chemistry

Abstract

Copper selenide thin films were prepared by electrophoretic deposition (EPD) using copper selenide powder synthesized by precipitation method. EPD is a combination of two processes which is electrophoresis and deposition. EPD was found suitable in a mixture of methanol and toluene which allows the particles to be well suspended and migrated to the electrode surface. X-ray diffraction (XRD) results on the powder showed the formation CuSe as a major phase with few CuSe2 peaks. The scanning electron microscopy (SEM) micrograph of the powder showed irregular surface structures due to polycrystalline form. Thermal gravimetric curve showed that copper selenide powder was preferable heated below 350 °C for heat treatment analysis. The deposition of CuSe films was able to be carried out in a short period of time due to high deposit ion rate with appropriate amount deposited on the substrate. The photoresponse did not show any significant dependent to the bath temperature. The sample showed indirect transition with band gap energy of 1.51 eV.

Lapisan nipis kuprum selenida dihasilkan menggunakan teknik pengenapan elektrophoretik daripada serbuk kuprum selenida yang disediakan melalui keadah pemendakan. Pengenapan elektrophoretik adalah kombinasi dua proses iaitu elektroporesis dan pngenapan. Di dapati pengenapan elektophoretik ini sesuai dilakukan dalam pelarut campuran metanol dan toluena kerana ia membenarkan butiran terampai dengan baik seterusnya membantu dalam penghijrahan butiran ke permukaan elektrod. Keputusan pembelauan sinar (XRD) ke atas serbuk kuprum selenida menunjukkan sebahagian besar adalah fasa CuSe dengan sedikit fasa CuSe2. Manakala keputusan mikroskop pengimbasan elektron (SEM) terhadap serbuk mempamerkan struktur permukaan yang tidak seragam disebabkan pembentukan kristal yang bersifat polihablur kristal. Penentuan suhu pemanasan ke atas serbuk di dapati fasa CuSe berada dalam keadaan stabil pada suhu di bawah 350 °C. Pembentukan lapisan CuSe dapat disediakan pada tempoh yang singkat disebabkan kadar pengenapan kadar yang tinggi dengan jumlah pemendakan yang berpatutan. Di dapati tiada peningkatan fotosensitiviti pada sampel apabila suhu pengenapan dinaikkan. Sampel yang terhasil menunjukkan keadaan peralihan tidak langsung dengan nilai luang tenaga lapisan kurum selenida 1.51 eV.

Item Type:Journal
Additional Information:The authors would like to thank the Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, for facilities provided, and gratefully acknowledged the financial support received in the form of a research grant (Vot. No. 54356) from the Ministry of Science, Technology and Environment, Malaysia that make the research possible.
Keywords:Electrophoretic deposition; Copper selenide; Thin films; Semiconductor;
Subjects:Q Science
ID Code:1062

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