Modeling of Nanoscale MOSFET Performance in the Velocity Saturation Region
Tan, Michael , and Razali Ismail, (2007) Modeling of Nanoscale MOSFET Performance in the Velocity Saturation Region. Elektrika Journal of Electrical Engineering, 9 (1). pp. 37-41. ISSN 01284428
Official URL: http://fke.utm.my/elektrika/june07/paper7june07.pdf
Universiti Teknologi Malaysia, Faculty of Electrical Engineering
Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology.
|Keywords:||Current-voltage, Drain source resistance, MOSFET, Threshold voltage, Velocity saturation.|
|Subjects:||T Technology, Engineering|
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