Single-Electron Transistors (SET): Literature Review

Amiza Rasmi, and Uda Hashim, (2005) Single-Electron Transistors (SET): Literature Review. Jurnal Penyelidikan dan Pendidikan Kejuruteraan, 2 (2). pp. 31-50. ISSN 18232981

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Affiliations

Kolej Universiti Kejuruteraan Utara Malaysia

Abstract

Single-electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The SET are often discussed as elements of nanometer scale because SET can be made very small and can detect the motion of individual electrons. However, SET has low voltage gain, high input impedances, and sensitive to random background charges. This makes it unlikely that SET would ever replace field-effect transistor (FET) in applications where large voltage gain or low output impedance is necessary. In this paper, we provide and overview of reseach developmentsof SET. The theoretical study of single electronics include orthodox theory, coulomb blockade, tunneling effect are discussed. On the other hand, the methods for modelling and simulation single-electron circuit are reviewed.

Item Type:

Journal

Keywords:

Single-electron transistor (SET), orthodox theory, Coulomb blockade, tunneling effects, quantum dot, Kondo effect, modelling, and stimulation

Subjects:

T Technology, Engineering

ID Code:

2611