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Gate Tunneling Current in Thin Oxide MOSFET

Mohammed Fakhrul Karim, and Sahbuddin Shaari, and Burhanuddin Yeop Majlis, (1996) Gate Tunneling Current in Thin Oxide MOSFET. Jurnal Fizik Malaysia, 17 (3). pp. 95-104. ISSN 0128-0333

Full text not available from this repository.

Affiliations

Universiti Kebangsaan Malaysia. Dept. of Electrical, Electronic and Systems Engineering. Microelectronics Group.

Abstract

Quantum mechanical tunneling of electrical conduction in thin insulating film (SiO₂) from the strongly inverted Si surface has been studied. A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a series of quantized energy levels in the potential well (assuming triangular in nature), formed by the large bending of the silicon conduction band at the surface. Due to the down scaling of the device dimension, the field across the oxide becomes high enough, and causes a large band bending in the form of a narrow potential well. Gate oxide thickness and gate voltage dependence of the tunneling current is analyzed using the tunneling current model. This study may be helpful to predict the oxide breakdown process.

Item Type:Journal
Additional Information:This note was added by the search_and_modify.pl script.
Keywords:Quantum mechanical tunneling of electrical conduction, calculating the penetration probability
Subjects:Q Science, Computer Science
T Technology, Engineering
ID Code:3386

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