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Low Dose Monitoring by Double Implant Technique in ic Fabrication

Ahmad I.B., and Weidemann, J., (1995) Low Dose Monitoring by Double Implant Technique in ic Fabrication. Jurnal Fizik Malaysia, 16 (4). pp. 139-145. ISSN 0128-0333

Full text not available from this repository.

Affiliations

Malaysian institute for Microelectronic Systems["lib/metafield:join_corp_creators" not defined]IMS-Fraunhofer Institut

Abstract

The utilisation of low dose implant monitoring (using Boron) in a manufacturing line has been discussed. The utilisation of Phosphorus ions as the second implant dose were also studied as comparison. The technique relies on the fact that the sheet resistant of doped layer will increase significantly when damaged by relatively low implant dose. The technique is very sensitive and applicable for adjusting the channel dose so that an accurate threshold voltage in MOS device could be achieved.

Item Type:Journal
Additional Information:This note was added by the search_and_modify.pl script.
Subjects:Q Science, Computer Science
T Technology, Engineering
ID Code:3753

1. Tohru Hara, Hiroyuki Hagiwara, Ryuji Khikawa, W. Lee Smith, C. Welles, S.K. Hahn and L. Larson, “Monitoring of dose in low dose implantation” in Nuclear Instruments and Methods in Physics Research Amsterdam, Holland: North-Holland. B55, (1991), PP 250-252.

2. Sam L. Sundram, and Arvid C. Carlson, “Double Implant Low Dose Technique in Analog IC Fabrication”; IEEE Transactions on semiconductor manufacturing Vol. 2, No. 4, (1989), pp 146-149.

3. S. Cherekdjian and W. Weisenberger, Daily 2 x 10¹² Monitoring of an Ion Implanter” in Nuclear Instrument and Methods in Physics Research B55, (1991) pp 178-182.

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