Low Dose Monitoring by Double Implant Technique in ic Fabrication
Ahmad I.B., and Weidemann, J., (1995) Low Dose Monitoring by Double Implant Technique in ic Fabrication. Jurnal Fizik Malaysia, 16 (4). pp. 139-145. ISSN 0128-0333
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Malaysian institute for Microelectronic Systems["lib/metafield:join_corp_creators" not defined]IMS-Fraunhofer Institut
The utilisation of low dose implant monitoring (using Boron) in a manufacturing line has been discussed. The utilisation of Phosphorus ions as the second implant dose were also studied as comparison. The technique relies on the fact that the sheet resistant of doped layer will increase significantly when damaged by relatively low implant dose. The technique is very sensitive and applicable for adjusting the channel dose so that an accurate threshold voltage in MOS device could be achieved.
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