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Switching Characteristics of SRO-MISS Devices

Burhanuddin Yeop Majlis, and Morant, M. J., (1991) Switching Characteristics of SRO-MISS Devices. Jurnal Kejuruteraan, 3 . pp. 47-56. ISSN 0128-0198

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Affiliations

Universiti Kebangsaan Malaysia. Faculty of Engineering["lib/metafield:join_corp_creators" not defined]University of Durham. School of Engineering and Applied Sciences

Abstract

The switching characteristics of the Metal-Insulator-Semiconductor-Switch (MISS) device with Silicon-Rich-Oxide (SRO) as the semi-insulating material have been studied at room temperature. The SRO films were deposited by atmospheric presure chemical vapour deposition (APCVD) at 650°C with $SiH{_4}$ and $N{_2}O$ reactant gases and $N{_2}$ carrier. The reactant gas phase ratio, $R{_0}$, varies from 0.09 to 0.25 and the deposition time from 0.6 to 2 minutes.

Item Type:Journal
Additional Information:This note was added by the search_and_modify.pl script.
Keywords:Semiconductors switch
Subjects:Q Science, Computer Science
T Technology, Engineering
ID Code:4299

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