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Backdiffraction Configuration for X-ray Standing Wave formed just above the Surface of the Crystal Containing a Stacking Fault

Bezirganyan, Hakob P., and Bezirganyan, Siranush E., and Bezirganyan, Hayk H., and Beziganyan, Petros H., (2002) Backdiffraction Configuration for X-ray Standing Wave formed just above the Surface of the Crystal Containing a Stacking Fault. Malaysian Journal of Science, 21A (Special Issue). pp. 31-40. ISSN 13943065

Full text not available from this repository.

Affiliations

Yerevan State University, Armenia. Faculty of Physics.
Yerevan State University, Armenia. Faculty of Physics.
Yerevan State University, Armenia. Faculty of Informatics and Apllied Mathematics.
State Engineering University of Armenia. Dept. of Computer Science.

Abstract

Presented theoretical paper concerns the application of the extremely sensitive Grazing-Angle Incidence X-ray Backdiffraction (GIXB) technique for investigations of the crystal containing a stacking fault. Fault plane is assumed parallel to the crystal entrance surface. It is shown that entire x-ray wave field intensity in vacuum is modulated periodically along the vacuum-crystal surface with the same period as the crystal diffracting net planes. X-ray wave field short-period modulation along the vacuum-crystal surface gives a possibility to determine the lateral positions if overlaid adsorbed atoms with respect to crystal lattice atoms by combination of GIXB with the X-ray Standing-Wave (XSW) technique i.e. by monitoring the secondary emissions. The development of such non-destructive investigation methods is in the focus of fundamental aspects of materials research, crystal engineering etc.

Item Type:Journal
Additional Information:Relative intensity (55) of entire x-ray wave field in vacuum is modulated along the crystal entrance surface with the same period d as diffracting net planes of the crystal (a short-period modulation). This gives an opportunity of determination of adsorbed atoms position along Ox-axis with respect to crystal lattice atoms. Thus the combination of GIXB method with XSW technique is also applicable for the surface structure analysis in the case when the diffracting crystal contains a stacking fault with fault plane parallel to crystal entrance surface.
Keywords:GIXB, X-ray Standing-Wave, Crystal
Subjects:Q Science, Computer Science
ID Code:8084

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